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IS41LV44004 - 4M x 4 (16-MBIT) DYNAMIC RAM

Download the IS41LV44004 datasheet PDF. This datasheet also covers the IS41C4400x variant, as both devices belong to the same 4m x 4 (16-mbit) dynamic ram family and are provided as variant models within a single manufacturer datasheet.

Description

CMOS Dynamic Random Access Memory.

These devices offer an accelerated cycle access called EDO Page Mode.

EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.

Features

  • Extended Data-Out (EDO) Page Mode access cycle.
  • TTL compatible inputs and outputs.
  • Refresh Interval:.
  • 2,048 cycles/32 ms.
  • 4,096 cycles/64 ms.
  • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden.
  • Single power supply:.
  • 5V±10% or 3.3V ± 10%.
  • Byte Write and Byte Read operation via two CAS.
  • Industrial temperature range -40°C to 85°C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS41C4400x_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS41LV44052B 4M x 4 (16-MBIT) DYNAMIC RAM ISSI
IS41LV16256 256K x 16 (4-MBIT) DYNAMIC RAM ISSI
IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
IS41LV1665 64K x16 bit Dynamic RAM ICSI
IS41LV32256 EDO DYNAMIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS41LV44002 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV44002B 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41LV44052 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV44054 4M x 4 (16-MBIT) DYNAMIC RAM
IS41LV4100 1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS41C4400X IS41LV4400X SERIES 4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE ISSI® www.DataSheet4U.com JUNE, 2001 FEATURES • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: – 2,048 cycles/32 ms – 4,096 cycles/64 ms • Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden • Single power supply: – 5V±10% or 3.3V ± 10% • Byte Write and Byte Read operation via two CAS • Industrial temperature range -40°C to 85°C DESCRIPTION The ISSI 4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word.
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