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IS41LV16100B Datasheet, Integrated Silicon Solution

IS41LV16100B mode equivalent, 1m x 16 (16-mbit) dynamic ram with edo page mode.

IS41LV16100B Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 180.45KB)

IS41LV16100B Datasheet
IS41LV16100B
Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 180.45KB)

IS41LV16100B Datasheet

Features and benefits


* TTL compatible inputs and outputs; tristate I/O
* Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden
* .

Application

The IS41LV16100B is packaged in a 42-pin 400-mil SOJ and 400-mil 50- (44-) pin TSOP (Type II). KEY TIMING PARAMETERS P.

Description

The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle t.

Image gallery

IS41LV16100B Page 1 IS41LV16100B Page 2 IS41LV16100B Page 3

TAGS

IS41LV16100B
16-MBIT
DYNAMIC
RAM
WITH
EDO
PAGE
MODE
Integrated Silicon Solution

Manufacturer


Integrated Silicon Solution

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