MM10R5 fet equivalent, high power rf ldmos fet.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/.
at frequencies HF to 2.7 GHz. It can be used in Class AB/B and Class C for all typical modulation formats.
Document Num.
The MM10R5 is a 5-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies HF to 2.7 GHz. It can be used in Class AB/B and Class C for all typical modulation formats.
Document Number: MM1.
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