MM1001 fet equivalent, high power rf ldmos fet.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Excellent thermal stability, low HCI drift
Suitable Applications
* 2-30MHz (HF .
at frequencies up to 2 GHz. It can be used in Class AB/B and Class C for all typical modulation formats.
Document Numbe.
The MM1001 is a 10-watt, highly rugged, unmatched LDMOS FET, designed for wide-band commercial and industrial applications at frequencies up to 2 GHz. It can be used in Class AB/B and Class C for all typical modulation formats.
Document Number: MM10.
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