ITSN20015P2 fet equivalent, rf power ldmos fet.
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Designed for broadband operation
* Excellent ruggedness
* Large Positive an.
with frequencies up to 2 GHz.
Document Number: ITSN20015P2 Product Datasheet V2.0
ITSN20015P2
*Typical Performanc.
The ITSN20015P2 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications, with frequencies up to 2 GHz.
Document Number: ITSN20015P2 Produ.
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