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Infineon Technologies Electronic Components Datasheet

ITS410E2 Datasheet

Smart High-Side Power Switch

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PROFET® ITS 410 E2
Smart Highside Power Switch
for Industrial Applications
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Operating temperature
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
Ta
65 V
4.7 ... 42 V
220 m
1.8 A
5A
-30…+85 °C
PG-TO220AB/5
5
Standard
5
1
Straight leads
Application
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOStechnology. Providing embedded protective functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage
protection
Current
limit
Gate
protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
5
sensor
Load
Short circuit
detection
GND
1
Signal GND
PROFET
Load GND
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Infineon Technologies AG
1 of 15
2006-Mar-28


Infineon Technologies Electronic Components Datasheet

ITS410E2 Datasheet

Smart High-Side Power Switch

No Preview Available !

PROFET® ITS 410 E2
Pin Symbol
Function
1
GND
- Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage, the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5
OUT
O Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 3)
Load dump
RI3)= 2 ,
protection2) VLoadDump =
RL= 6.6 , td= 400 ms,
UA
IN=
+ Vs, UA = 13.5
low or high
V
Vbb
VLoad dump4)
Load current (Short circuit current, see page 4)
IL
Junction temperature
Tj
Operating temperature range
Ta
Storage temperature range
Tstg
Power dissipation (DC), TC 25 °C
Ptot
Inductive load switch-off energy dissipation, single pulse
Vbb
= 12V,
Tj,start
= 150°C,
TC
= 150°C const.
IL = 1.8 A, ZL =
2.3 H,
0
:
EAS
Electrostatic discharge capability (ESD)
IN: VESD
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
VIN
IIN
IST
Values
65
100
Unit
V
V
self-limited
+150
-30 ...+85
-40 …+105
50
A
°C
W
4.5 J
1 kV
2
-0.5 ... +6
±5.0
±5.0
V
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
Values
Unit
min typ max
-- -- 2.5 K/W
-- -- 75
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 kresistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
4)
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Infineon Technologies AG
2
2006-Mar-28


Part Number ITS410E2
Description Smart High-Side Power Switch
Maker Infineon
Total Page 15 Pages
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