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ITDE10700D4 - High Power RF LDMOS FET

Description

The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

Typical Performance (On Innogration fixture with d

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Optimized for Doherty.

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Datasheet Details

Part number ITDE10700D4
Manufacturer Innogration
File Size 558.01 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITDE10700D4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Innogration (Suzhou) Co., Ltd. 1GHz, 700W, 40V High Power RF LDMOS FETs Description The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 15 700 68.4 915MHz 100us,10%, Pulsed 15.5 720 69 Recommended driver: MU1503V operated at 40V Document Number: ITDE10700D4 Preliminary Datasheet V1.
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