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ITDE10700D4E - High Power RF LDMOS FET

Download the ITDE10700D4E datasheet PDF. This datasheet also covers the ITDE10700D4 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz.

Typical Performance (On Innogration fixture with d

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITDE10700D4-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITDE10700D4E
Manufacturer Innogration
File Size 558.01 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITDE10700D4E Datasheet

Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. 1GHz, 700W, 40V High Power RF LDMOS FETs Description The ITDE10700D4 is a 700-watt, internally matched LDMOS FETs, designed for Multiple ISM and RF Energy applications with frequencies up to 1GHz. It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase=25 degree C Frequency Signal Gp (dB) P3dB(W) D@P3dB (%) 915MHz CW 15 700 68.4 915MHz 100us,10%, Pulsed 15.5 720 69 Recommended driver: MU1503V operated at 40V Document Number: ITDE10700D4 Preliminary Datasheet V1.
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