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ITCH27100B2E Datasheet, Innogration

ITCH27100B2E fet equivalent, high power rf ldmos fet.

ITCH27100B2E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 921.46KB)

ITCH27100B2E Datasheet

Features and benefits


* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift.

Application

with frequencies from 2500 to 2700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station m.

Description

The ITCH27100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2500 to 2700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base .

Image gallery

ITCH27100B2E Page 1 ITCH27100B2E Page 2 ITCH27100B2E Page 3

TAGS

ITCH27100B2E
High
Power
LDMOS
FET
Innogration

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