Datasheet Details
| Part number | ITCH20120B2E |
|---|---|
| Manufacturer | Innogration |
| File Size | 881.01 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
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Download the ITCH20120B2E datasheet PDF. This datasheet also covers the ITCH20120B2 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.
The ITCH20120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1800 to 2000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
Typ| Part number | ITCH20120B2E |
|---|---|
| Manufacturer | Innogration |
| File Size | 881.01 KB |
| Description | High Power RF LDMOS FET |
| Datasheet |
|
|
|
|
| Part Number | Description | Manufacturer |
|---|---|---|
| ITC008 | Technical Traing Manual | Thomson |
| ITC008 | Main Board | Thomson |
| ITC008 | Deflection | Thomson |
| ITC1000 | Pulsed Avionics | GHz Technology |
| ITC1100 | Common base bipolar transistor | GHz Technology |
| Part Number | Description |
|---|---|
| ITCH20120B2 | High Power RF LDMOS FET |
| ITCH20160B2 | High Power RF LDMOS FET |
| ITCH20160B2E | High Power RF LDMOS FET |
| ITCH20180B2 | High Power RF LDMOS FET |
| ITCH20180B2E | High Power RF LDMOS FET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.