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BTS149 Datasheet Smart Lowside Power Switch

Manufacturer: Infineon Technologies AG

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Datasheet Details

Part number BTS149
Manufacturer Infineon Technologies AG
File Size 309.41 KB
Description Smart Lowside Power Switch
Download Download datasheet BTS149 Download (PDF)

General Description

N channel vertical power FET in Smart SIPMOS  chip on chip technology.

Fully protected by embedded protected functions.

V bb + LOAD M D rain 2 1 IN dv /d t lim ita tio n C u rre n t lim ita tio n O ve rvoltag e p rotection ESD O v erloa d pro te ctio n O ve rte m pe rature p ro te ctio n Sh ho rt circ c ircu it S ort uit p protection ro te ctio n S o u rce 3 H IT F E T Page 1 2004-02-02 BTS 149 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 19 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn.

Overview

HITFET=BTS 149 Smart Lowside Power Switch.

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • =Thermal shutdown with latch.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 18 30 19 V mΩ A A 6000 mJ limitation.
  • Status feedback with external input resistor.
  • Analog driving possible Applicati.

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