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BTS141 - Smart Lowside Power Switch

General Description

N channel vertical power FET in Smart SIPMOS  chip on chip technology.

Fully protected by embedded protected functions.

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • =Thermal shutdown with latch.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 28 25 12 V mΩ A A 4000 mJ limitation.
  • Status feedback with external input resistor.
  • Analog driving possible Applicati.

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Datasheet Details

Part number BTS141
Manufacturer Infineon Technologies AG
File Size 197.94 KB
Description Smart Lowside Power Switch
Datasheet download datasheet BTS141 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HITFET=BTS 141 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 28 25 12 V mΩ A A 4000 mJ limitation • Status feedback with external input resistor • Analog driving possible Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS  chip on chip technology.