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IPB80N08S2-07 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free) PG-TO263-3-2.
  • Ultra low Rds(on).
  • 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.1 mΩ 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N08S2-07 IPP80N08S2-07 IPI80N08S2-07 Package PG-TO263-3-2 PG-TO220-3-1 PG-T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 Product Summary V DS R DS(on),max (SMD version) ID 75 V 7.
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