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IPB80N08S4-06 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Product Summary V DS R DS(on),max (SMD version) ID 80 V 5.5 mW 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N08S4-06 IPI80N08S4-06 IPP80N08S4-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0806 4N0806 4N0806 M.

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Full PDF Text Transcription

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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 Product Summary V DS R DS(on),max (SMD version) ID 80 V 5.
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