Datasheet4U Logo Datasheet4U.com

IPB107N20N3G - Power-Transistor

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPB107N20N3 Power-Transistor Infineon
IPB107N20N3 N-Channel MOSFET INCHANGE
IPB107N20NA Power-Transistor Infineon
IPB107N20NA N-Channel MOSFET INCHANGE
IPB100P03P3L-04 Power-Transistor Infineon

Other Datasheets by Infineon

Part Number Description
IPB100N04S2-04 Power-Transistor
IPB100N04S2L-03 Power-Transistor
IPB100N04S3-03 OptiMOS-T Power-Transistor
IPB100N04S4-H2 OptiMOS-T2 Power-Transistor
IPB100N06S2-05 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification 200 V 10.
Published: |