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IPB100N06S3L-03 - Power-Transistor

Download the IPB100N06S3L-03 datasheet PDF. This datasheet also covers the IPB-100N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Key Features

  • N-channel - Logic Level - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • Ultra low Rds(on).
  • 100% Avalanche tested.
  • ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 2.7 100 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 Package PG-TO263-3-2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB-100N-06S3L.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IPB107N20NA Power-Transistor Infineon
IPB107N20NA N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB100N06S3-03 Power-Transistor
IPB100N06S2-05 Power-Transistor
IPB100N06S2L-05 Power-Transistor
IPB100N04S2-04 Power-Transistor
IPB100N04S2L-03 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS®-T Power-Transistor Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 2.