* Revolutionary semiconductor material - Silicon Carbide
* Switching behavior benchmark
* No reverse recovery/ No forward recovery
* No temperature influe.

www.DataSheet4U.net Product Summary V DC Qc IF 600 19 8 V nC A
* Breakdown voltage tested at 5mA2) thinQ! 2G Diod.

IDH08S120

IDH08SG60C

IDH08G120C5

IDH08G65C5

IDH08G65C6

IDH02G120C5

IDH02G65C5

IDH02SG120

IDH03G65C5

IDH03SG60C

IDH04G65C5

IDH04G65C6

IDH04S60C

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