Datasheet4U Logo Datasheet4U.com

IDH08G120C5 - Diode

Description

Rev.

Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / No forward recovery.
  • Temperature independent switching behavior.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Diode Silicon Carbide Schottky Diode IDH08G120C5 5th Generation CoolSiCâ„¢ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.
Published: |