SIGC12T120LE igbt equivalent, igbt.
* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling
This chip is.
* drives
C G
E
Chip Type SIGC12T120LE
VCE 1200V
ICn 8A
Die Size 3.54 x 3.5 mm2
Package sawn on foil
MECHANIC.
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld
Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG .
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