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SIGC12T120LE Datasheet, Infineon

SIGC12T120LE igbt equivalent, igbt.

SIGC12T120LE Avg. rating / M : 1.0 rating-11

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SIGC12T120LE Datasheet

Features and benefits


* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is.

Application


* drives C G E Chip Type SIGC12T120LE VCE 1200V ICn 8A Die Size 3.54 x 3.5 mm2 Package sawn on foil MECHANIC.

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG .

Image gallery

SIGC12T120LE Page 1 SIGC12T120LE Page 2 SIGC12T120LE Page 3

TAGS

SIGC12T120LE
IGBT
SIGC12T120L
SIGC12T120
SIGC12T120E
Infineon

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