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SIGC12T120E Datasheet, Infineon

SIGC12T120E igbt equivalent, igbt.

SIGC12T120E Avg. rating / M : 1.0 rating-11

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SIGC12T120E Datasheet

Features and benefits


* 1200V Trench + Field Stop technology
* low turn-off losses
* short tail current
* positive temperature coefficient
* easy paralleling This chip is.

Application


* drives Chip Type SIGC12T120E VCE 1200V IC 8A Die Size 3.54 x 3.5 mm2 C G E Package sawn on foil Mechanical .

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.2 2.3 Subjects (major changes since last revision) Wafer diameter change to 200 mm Additional.

Image gallery

SIGC12T120E Page 1 SIGC12T120E Page 2 SIGC12T120E Page 3

TAGS

SIGC12T120E
IGBT
SIGC12T120
SIGC12T120L
SIGC12T120LE
Infineon

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