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SIDC38D65C8 - Fast switching diode

Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG A

Features

  • 650V EMCON 3 technology 65 µm chip Recommended for:.
  • Power module.
  • Soft, fast switching.
  • Low reverse recovery charge C.
  • Small temperature coefficient.

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Full PDF Text Transcription (Reference)

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SIDC38D65C8 Fast switching diode chip in EMCON 3 -Technology A Features: • 650V EMCON 3 technology 65 µm chip Recommended for: • Power module • Soft, fast switching • Low reverse recovery charge C • Small temperature coefficient Applications: • Qualified according to JEDEC for target • Drives applications • White goods • Resonant applications Chip Type VR I 1) Fn Die Size Package SIDC38D65C8 650V 150A 4.9 x 7.8 mm2 sawn on foil 1 ) nominal forward current at Tc = 100°C, not subject to production test - verified by design/characterisation Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal 4.9 x 7.8 38.22 4.2 x 7.
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