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SIDC30D120H8
Fast switching diode chip in Emitter Controlled Technology
Features:
1200V Emitter Controlled technology 120 µm chip
Soft, fast switching Low reverse recovery charge Small temperature coefficient Qualified according to JEDEC for target
applications
Recommended for:
Power modules and discrete devices
Applications:
SMPS, resonant applications, drives
Chip Type
VR
IFn
SIDC30D120H8 1200V 50A
Die Size 5.5 x 5.5 mm2
Package sawn on foil
Mechanical Parameters
Die size Area total
5.5 x 5.5 30.25
mm2
Anode pad size
4.78 x 4.78
Thickness
120
µm
Wafer size
200
mm
Max.
SIDC30D120H8 Datasheet
