PTVA042502EC fet equivalent, thermally-enhanced high power rf ldmos fet.
include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent t.
in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or ea.
The PTVA042502EC and PTVA042502FC LDMOS FETs are designed for use in power amplifier applications in the 470 MHz to 806 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down or earless flanges. Manufactured with.
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