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PTFA240451E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTFA240451E
Thermally-Enhanced High Power RF LDMOS FET
45 W, 2420 – 2480 MHz
Description
The PTFA240451E is a thermally-enhanced, 45-watt, internally-
matched GOLDMOS® FET intended for CDMA2000 and WiMAX
applications from 2420 to 2480 MHz. Thermally-enhanced packaging
provides the coolest operation available. Full gold metallization
ensures excellent device lifetime and reliability.
PTFA240451E
Package H-30265-2
Three-Carrier CDMA2000 Performance
VDD = 28 V, IDQ = 450 mA, ƒ = 2450 MHz
45
40
35
30
25
20
15
10
5
0
30
Efficiency
ACP Up
ACP Low
ALT Up
-38
-42
-46
-50
-54
-58
-62
Efficiency -66
-70
-74
32 34 36 38 40 42
Output Power, Avg. (dBm)
Features
Thermally-enhanced, lead-free and
RoHS-compliant packaging
• Broadband internal matching
• Typical two-carrier CDMA performance at 2450
MHz, 28 V
- Average output power = 10 W
- Linear Gain = 14 dB
- Efficiency = 27%
- Adjacent channel power = –45 dBc
• Typical CW performance, 2450 MHz, 28 V
- Output power at P–1dB = 50 W
- Efficiency = 54%
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz
bandwidth at ƒC ± 2.135 MHz offset
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Gps — 14 — dB
ηD
— 31
%
ACPR
— –45
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2008-03-04


Infineon Technologies Electronic Components Datasheet

PTFA240451E Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTFA240451E
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 450 mA, POUT = 45 W PEP, ƒ = 2480 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
ηD
IMD
Min
13.5
39
Typ
14
40
–30
Max
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 450 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
2.0
Typ
0.17
2.5
Max
1.0
10.0
3.0
1.0
Unit
V
µA
µA
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 45 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
–0.5 to +12
200
196
1.12
–40 to +150
0.89
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA240451E V1
Package Outline
H-30265-2
Package Description
Thermally-enhanced slotted flange, single-ended
Marking
PTFA240451E
Data Sheet
2 of 10
Rev. 04, 2008-03-04


Part Number PTFA240451E
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
Total Page 10 Pages
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