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Infineon Technologies Electronic Components Datasheet

PTAC240502FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

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PTAC240502FC
Thermally-Enhanced High Power RF LDMOS FET
50 W, 28 V, 2300 – 2400 MHz
Description
The PTAC240502FC is a 47-watt LDMOS FET with an
asymmetrical design intended for use in multi-standard cellular
power amplifier applications in the 2300 to 2400 MHz frequency
band. Features include dual-path design, input matching, high gain
and thermally-enhanced package with earless flanges. Manu-
factured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 mA, VGS1 = 2.6 V,
VGS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
16
60
15
Gain
14
50
40
13
Efficiency
12
30
20
11 10
10
26
ptac240502fc_g1
0
30 34 38 42 46
Output Power (dBm)
PTAC240502FC
Package H-37248-4
Features
• Input matched
• Asymmetric Doherty design
- Main: P1dB = 17 W Typ
- Peak: P1dB = 33 W Typ
• Typical Pulsed CW performance, 2350 MHz,
28 V, 160 µs pulse width, 10% duty cycle,
Doherty Configuration
- Output power at P1dB = 45.7 W
- Efficiency = 46.2%
- Gain = 14.6 dB
• Typical single-carrier WCDMA performance,
2350 MHz, 28 V, 8.4 dB PAR @ 0.01% CCDF
- Output power = 8.91 W
- Efficiency = 44.2%
- Gain = 14.2 dB
- ACPR = –31 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 50 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 120 mA, POUT = 10 W avg, VGS2 = 1.3 V, ƒ1 = 2345 MHz, ƒ2 = 2355 MHz, 3GPP signal,
channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Min
13
41
Typ
14.3
44
–33
Max
–25
Unit
dB
%
dBc
Rev. 02.3, 2016-06-21


Infineon Technologies Electronic Components Datasheet

PTAC240502FC Datasheet

Thermally-Enhanced High Power RF LDMOS FET

No Preview Available !

PTAC240502FC
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance (main)
On-State Resistance (peak)
Operating Gate Voltage (main)
Operating Gate Voltage (peak)
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 120 mA
VDS = 28 V, IDQ = 0 mA
VGS = 10 V, VDS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (TCASE = 60°C, 50 W CW)
Ordering Information
Type and Version
PTAC240502FC V1 R0
PTAC240502FC V1 R250
Order Code
PTAC240502FCV1R0XTMA1
PTAC240502FCV1R250XTMA1
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
RDS(on)
VGS
VGS
IGSS
Min
65
2.6
1.2
Typ
0.4
0.2
2.7
1.3
Max
1
10
2.8
1.5
1
Unit
V
µA
µA
W
W
V
V
µA
Symbol
VDSS
VGS
VDD
TJ
TSTG
RqJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
1.29
Unit
V
V
V
°C
°C
°C/W
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.3, 2016-06-21


Part Number PTAC240502FC
Description Thermally-Enhanced High Power RF LDMOS FET
Maker Infineon
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