PTAC240502FC
PTAC240502FC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band. Features include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (d B) Drain Efficiency (%)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 120 m A, VGS1 = 2.6 V, VGS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA signal, PAR = 8 d B, 10 MHz carrier spacing,
BW 3.84 MHz 16
Gain
50 40
Efficiency
30 20
11 10
10 26 ptac240502fc_g1
30 34 38 42 46
Output Power (d Bm)
PTAC240502FC Package H-37248-4
Features
- Input matched
- Asymmetric Doherty design
- Main: P1d B = 17 W Typ
- Peak: P1d B = 33 W Typ
- Typical...
