PTAC240502FC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

The PTAC240502FC by Infineon is a Thermally-Enhanced High Power RF LDMOS FET. Below is the official datasheet preview.

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PTAC240502FC Thermally-Enhanced High Power RF LDMOS FET by Infineon - Datasheet Preview — Official preview page of the **PTAC240502FC** Thermally-Enhanced High Power RF LDMOS FET datasheet (Infineon).

Datasheet Details

Part number	PTAC240502FC
Manufacturer	Infineon
File Size	446.96 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTAC240502FC-Infineon.pdf
Additional preview pages of the PTAC240502FC datasheet.

PTAC240502FC Product details

Description

The PTAC240502FC is a 47-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.

Features

include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 120 mA, VGS1 = 2.6 V, VGS2 = 1.3 V, ƒ = 2400 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz 16 60 15 Gain 14 50 40 13 Efficiency 12 30 20 11 10 10 26 pt.

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Published: Nov 27, 2016 |