IRF1407L Datasheet | Infineon

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for low-profile applications. HEXFET® Power MOSFET VDSS RDS(on) 75V 0.0078 100A D2 Pak IRF1407SPb F S GD TO-262 Pak IRF1407LPb F G Gate D Drain S Source Base part number IRF1407LPb F IRF1407SPb F Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube Tape and Reel Left Orderable Part Number IRF1407LPb F (Obsolete) IRF1407STRLPb F Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  ID @ TC = 100°C IDM PD @TA = 25°C Continuous Drain Current, VGS @ 10V  Pulsed Drain Current  Maximum Power Dissipation PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited)  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt Operating Junction...