Download IRF1407L Datasheet PDF
Inchange Semiconductor
IRF1407L
FEATURES - Static drain-source on-resistance: RDS(on) ≤7.8mΩ - Enhancement mode - Fast Switching Speed - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation - DESCRITION - reliable device for use in a wide variety of applications - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage VGSS Gate-Source Voltage ±20 Drain Current-Continuous Tc=25℃ Tc=100℃ 100 70 Drain Current-Single Pulsed Total Dissipation @TC=25℃ Tch Max. Operating Junction Temperature ℃ Tstg Storage Temperature -55~175 ℃ - THERMAL CHARACTERISTICS...