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IPT009N06NM5 - MOSFET

Description

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Features

  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel, normal level.
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPT009N06NM5 MOSFET OptiMOSTM5Power-Transistor,60V Features •100%avalanchetested •Superiorthermalresistance •N-channel,normallevel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.9 mΩ ID 427 A Qoss 181 nC QG(0V..10V) 171 nC TOLL Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT009N06NM5 Package PG-HSOF-8 Marking 009N06N RelatedLinks - Final Data Sheet 1 Rev.2.0,2023-03-27 OptiMOSTM5Power-Transistor,60V IPT009N06NM5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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