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IPS12CN10LG - Power-Transistor

Features

  • N-channel, logic level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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OptiMOS®2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPP12CN10L G IPS12CN10L G IPS12CN10L G IPP12CN10L G 100 V 12 mW 69 A Package PG-TO220-3 PG-TO251-3-11 Marking 12CN10L 12CN10L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=69 A, R GS=25 W Reverse diode dv /dt dv /dt I D=69
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