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IPB12CN10NG - Power-Transistor

Download the IPB12CN10NG datasheet PDF. This datasheet also covers the IPB12CN10N variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB12CN10N-Infineon.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Infineon

Part Number Description
IPB12CN10N Power-Transistor
IPB120N03S4L-03 Power-Transistor
IPB120N04S3-02 Power-Transistor
IPB120N04S4-01 Power-Transistor
IPB120N04S4-02 Power-Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.