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IPB120N03S4L-03 - Power-Transistor

Datasheet Summary

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • 100% Avalanche tested IPB120N03S4L-03 Product Summary V DS R DS(on),max ID 30 V 3 mW 120 A PG-TO263-3-2 Type IPB120N03S4L-03 Package PG-TO263-3-2 Ordering Code Marking - 4N03L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain curre.

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Datasheet Details

Part number IPB120N03S4L-03
Manufacturer Infineon
File Size 214.56 KB
Description Power-Transistor
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OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • 100% Avalanche tested IPB120N03S4L-03 Product Summary V DS R DS(on),max ID 30 V 3 mW 120 A PG-TO263-3-2 Type IPB120N03S4L-03 Package PG-TO263-3-2 Ordering Code Marking - 4N03L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D=60A Avalanche current, single pulse I AS - Gate source voltage V GS Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg IEC climatic categ
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