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IPB081N06L3 - Power-Transistor

Download the IPB081N06L3 datasheet PDF. This datasheet also covers the IPB081N06L3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • N-channel, logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB081N06L3G_InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPB081N06L3 N-Channel MOSFET INCHANGE
IPB081N06L3G Power-Transistor Infineon Technologies
IPB080N03L N-Channel MOSFET INCHANGE
IPB080N06NG Power-Transistor Infineon Technologies
IPB082N10N3G Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
IPB080N03L Power-Transistor
IPB080N03LG Power-Transistor
IPB083N10N3 Power-Transistor
IPB083N10N3G Power-Transistor
IPB083N15N5LF MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Type OptiMOS™3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 IPB081N06L3 G IPP084N06L3 G IPI084N06L3 G Product Summary VDS RDS(on),max (SMD) ID 60 V 8.