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IPB031NE7N3 - Power Transistor

Download the IPB031NE7N3 datasheet PDF. This datasheet also covers the IPB031NE7N3G variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Optimized technology for synchronous rectification.
  • Ideal for high frequency switching and DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID.
  • Very low on-resistance RDS(on).
  • N-channel, normal level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPB031NE7N3G_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPB031NE7N3 N-Channel MOSFET INCHANGE
IPB031NE7N3G Power-Transistor Infineon Technologies AG
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IPB033N10N5LF N-Channel MOSFET INCHANGE
IPB034N03L N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPB031N08N5 MOSFET
IPB032N10N5 100V MOSFET
IPB034N03L Power-Transistor
IPB034N06L3 Power-Transistor
IPB034N06L3G Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OptiMOSTM3 Power-Transistor Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters • Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB031NE7N3 G IPB031NE7N3 G 75 V 3.
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