IPA60R120P7
Key Features
- Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding commutationruggedness
- Significantreductionofswitchingandconductionlosses
- ExcellentESDrobustness>2kV(HBM)forallproducts
- BetterRDS(on)/packageproductscomparedtocompetitionenabledbya lowRDS(on)*A(below1Ohm*mm²) Benefits
- Easeofuseandfastdesign-inthroughlowringingtendencyandusage acrossPFCandPWMstages
- Simplifiedthermalmanagementduetolowswitchingandconduction losses
- Increasedpowerdensitysolutionsenabledbyusingproductswith smallerfootprintandhighermanufacturingqualitydueto>2kVESD protection
- Suitableforawidevarietyofapplicationsandpowerranges Potentialapplications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom andUPS. Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 120 mΩ Qg,typ 36 nC ID,pulse 78 A Eoss @ 400V
- 0 µJ Body diode diF/dt 900 A/µs Type/OrderingCode IPA60R120P7 Final Data Sheet Package PG-TO 220 FullPAK 1 Marking 60R120P7 PG-TO220FP Drain Pin 2 Gate Pin 1
- 1: Internal body diode *2: Integrated ESD diode Source Pin 3 RelatedLinks see Appendix A Rev.2.2,2020-01-29 600VCoolMOSªP7PowerDevice
