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IMZ120R045M1 - 1200V SiC Trench MOSFET

Key Features

  • Very low switching losses.
  • Threshold-free on state characteristic.
  • Wide gate-source voltage range.
  • Benchmark gate threshold voltage, VGS(th) = 4.5V.
  • 0V turn-off gate voltage.
  • Fully controllable dv/dt.
  • Commutation robust body diode, ready for synchronous rectification.
  • Easy to use/drive due to sense (driver) source pin for better control of the gate.
  • Temperature independent turn-off switching losses Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 B.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.