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IMZ120R060M1H - 1200V SiC Trench MOSFET

Datasheet Summary

Features

  • Very low switching losses.
  • Threshold-free on state characteristic.
  • Benchmark gate threshold voltage, VGS(th) = 4.5V.
  • 0V turn-off gate voltage for easy and simple gate drive.
  • Fully controllable dV/dt.
  • Robust body diode for hard commutation.
  • Temperature independent turn-off switching losses.
  • Sense pin for optimized switching performance Gate pin 4 Sense pin 3 Drain pin 1 Source pin 2 Benefits.
  • Efficiency improvement.
  • Enabling higher frequency.

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Datasheet preview – IMZ120R060M1H

Datasheet Details

Part number IMZ120R060M1H
Manufacturer Infineon
File Size 1.24 MB
Description 1200V SiC Trench MOSFET
Datasheet download datasheet IMZ120R060M1H Datasheet
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Full PDF Text Transcription

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IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state characteristic  Benchmark gate threshold voltage, VGS(th) = 4.
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