IMW120R007M1H datasheet, mosfet equivalent, Infineon

Features and benefits

* VDSS = 1200 V at Tvj = 25°C
* IDDC = 225 A at Tc = 25°C
* RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Benchmark gate thre.

Application

* General purpose drives (GPD)
* EV-Charging
* Online UPS/Industrial UPS
* String inverter
* Solar o.

Description

1
  – gate 2
  – drain 3
  – source TO-247
  – 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R007M1H Package PG-TO247-3-STD-NN2.5 Marking 12M1H007 Datasheet www.infineon.c.

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