Datasheet Details
| Part number | IMW120R090M1H |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.15 MB |
| Description | Silicon Carbide MOSFET |
| Datasheet |
 IMW120R090M1H Datasheet
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Key Features
- Very low switching losses Gate pin 1.
- Threshold-free on state characteristic.
- Wide gate-source voltage range.
- Benchmark gate threshold voltage, VGS(th) = 4.5V.
- 0V turn-off gate voltage for easy and simple gate drive.
- Fully controllable dV/dt.
- Robust body diode for hard commutation.
- Temperature independent turn-off switching losses Benefits.
- Efficiency improvement.
- Enabling higher frequency.
- Increased power density.
- Cooling ef.