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IGI60L5050A1M Datasheet, Infineon

IGI60L5050A1M half-bridge equivalent, ips / 600v gan half-bridge.

IGI60L5050A1M Avg. rating / M : 1.0 rating-11

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IGI60L5050A1M Datasheet

Features and benefits


* Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A - Application-.

Application

Description IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmo.

Description

IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package. In the low-to-medium power area (example configuration i.

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IGI60L5050A1M Page 1 IGI60L5050A1M Page 2 IGI60L5050A1M Page 3

TAGS

IGI60L5050A1M
IPS
600V
GaN
half-bridge
IGI60F1414A1L
IGI60F2020A1L
IGI60F2727A1L
Infineon

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