IDW40G65C5B datasheet, diode equivalent, Infineon

Avg. rating / M : 1.0 rating-1

datasheet Download (Size : 694.29KB)

Features and benefits

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

Application

* Breakdown voltage tested at 44 mA2) 3)
* Optimized for high temperature operation Benefits
* System effici.

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load.

Image gallery