IDW12G65C5 datasheet, diodes equivalent, Infineon Technologies

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datasheet Download (Size : 1.14MB)

Features and benefits

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independ.

Application

* Breakdown voltage tested at 27 mA2)
* Optimized for high temperature operation 1 2 CASE 3 Benefits
*.

Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulti.

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