IDW12G65C5 Datasheet | Infineon

Description Thin Q!™ Generation 5 represents Infineon leading edge technology for the Si C Schottky Barrier diodes. Thanks to the more pact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thin Q!™ Generation 5 has been designed to plement our 650V Cool MOS™ families: this ensures meeting the most stringent application requirements in this voltage range. Features - Revolutionary semiconductor material - Silicon Carbide - Benchmark switching behavior - No reverse recovery/ No forward recovery - Temperature independent switching behavior - High surge current capability - Pb-free lead plating; Ro HS pliant - Qualified according to JEDEC1) for target applications - Breakdown voltage tested at 27 m A2) - Optimized for high temperature operation CASE Benefits - System efficiency improvement over Si diodes - System cost / size savings due to reduced cooling requirements - Enabling higher frequency / increased power density solutions - Higher system reliability due to lower operating temperatures - Reduced EMI Applications - Switch mode power supply - Power factor correction - Solar inverter - Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit QC; VR=400V 18 n C EC;...