* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independe.

* Breakdown voltage tested at 9 mA2) 3)
* Optimized for high temperature operation Benefits
* System efficie.

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. A combination with a new, more compact design and thinwafer technology results is a new family of products showing improved efficiency over all load.

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