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BSZ160N10NS3 G
OptiMOSTM3 Power-Transistor
Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Product Summary V DS R DS(on),max ID 100 16 40 PG-TSDSON-8 V mΩ A
Type BSZ160N10NS3 G
Package PG-TSDSON-8
Marking 160N10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=60 K/W 2) Pulsed drain current3) Avalanche energy, single pulse4) Gate source voltage
1) 2)
Value 40 28
Unit A
8 160 8
BSZ160N10NS3G Datasheet
