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BSZ165N04NS G
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 100% Avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Type BSZ165N04NS G Package PG-TSDSON-8 Marking 165N04N
Product Summary V DS R DS(on),max ID 40 16.
BSZ165N04NSG Datasheet
