AUIRFR9024N mosfet equivalent, power mosfet.
* Advanced Planar Technology
* Low On-Resistance
* P-Channel
* Dynamic dv/dt Rating
* 150°C Operating Temperature
* Fast Switching
* Fully Ava.
this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 513.11KB)