* Advanced Planar Technology
* Low On-Resistance
* P-Channel
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Ava.

of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This b.

Specifically designed for Automotive applications of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts