AUIRF7749L2TR Datasheet | Infineon

AUTOMOTIVE GRADE -  Advanced Process Technology -  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications -  Exceptionally Small Footprint and Low Profile -  High Power Density -  Low Parasitic Parameters -  Dual Sided Cooling -  175°C Operating Temperature -  Repetitive Avalanche Allowed up to Tjmax -  Lead Free, Ro HS pliant and Halogen Free -  Automotive Qualified - Automotive Direct FET™ Power MOSFET  V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg 60V 1.1m 1.5m 345A 183n C S S SD S Applicable Direct FET™ Outline and Substrate Outline  M2 M4 L8 Direct FET2 L-can L4 L6 L8 Description The AUIRF7749L2 bines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced Direct FET™ packaging technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile. The Direct FET™ package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET™ package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced Direct FET™ packaging platform coupled with the latest silicon technology allows the AUIRF7749L2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These Features bine to make this MOSFET a highly efficient,...