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AUIRF7749L2 - Power MOSFET

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General Description

The AUIRF7749L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging technology to achieve exceptional performance in a package that has the footprint of a D-Pak (TO-252AA) and only 0.7mm profile.

The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET™ package allows dual sided cooling to maximize thermal transfer in automotive power systems.

Overview

AUTOMOTIVE GRADE AUIRF7749L2TR  Advanced Process Technology  Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications  Exceptionally Small Footprint and Low Profile  High Power Density  Low Parasitic Parameters  Dual Sided Cooling  175°C Operating Temperature  Repetitive Avalanche Allowed up to Tjmax  Lead Free, RoHS Compliant and Halogen Free  Automotive Qualified * Automotive DirectFET™ Power MOSFET  V(BR)DSS RDS(on) typ.

max.

ID (Silicon Limited) Qg 60V 1.1m 1.

Key Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive.

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