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AUIRF7379Q - Dual N/P-Channel MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Overview

  AUTOMOTIVE GRADE AUIRF7379Q.

Key Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dual N and P Channel MOSFET.
  • Surface Mount.
  • Available in Tape & Reel.
  • 150°C Operating Temperature.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   N-.