Click to expand full text
Type
OptiMOSTM3 Power-Transistor
Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21
BSZ900N20NS3 G
Product Summary VDS RDS(on),max ID
200 V 90 mW 15.2 A
PG-TSDSON-8
Type BSZ900N20NS3 G
Package
Marking
PG-TSDSON-8 900N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt
ID
I D,pulse E AS dv /dt
T C=25 °C T C=100 °C T C=25 °C I D=7.
900N20N Datasheet
